ST662ACD データシートの表示（PDF） - STMicroelectronics

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ST662ACD

DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY

STMicroelectronics 

ST662A

APPLICATION CIRCUIT

Based on fast charge/discharge of capacitors,

this circuit involves high di/dt values limited only

by Ron of switches. This implies a critical layout

design due to the need to minimize inductive

paths and place capacitors as close as possible

to the device.

A good layout design is strongly recommended

for noise reason. For best performance, use very

short connections to the capacitors and the

values shown in table 1.

C3 and C4 must have low ESR in order to

minimize the output ripple. Their values can be

reduced to 2µF and 1µF, respectively, when

using ceramic capacitors, but must be of 10µF or

larger if aluminium electrolytic are chosen.

C5 must be placed as close to the device as

possible and could be omitted if very low output

noise performance are not required.

Fig 4 and Fig 5 show, respectively, our

EVALUATION kit layout and the relatively

electrical shematic.

Figure 4: KIT Lay-out

Figure 5: Electrical Schematic

Table 1: List of Components

CAPACITOR

Charge Pump C1

Charge Pump C2

Input C3

O utput C4

Decoupling C5

6/12

TYPE

Ce r am ic

Ce r am ic

Electrolyt ic Tantalum

Electrolyt ic Tantalum

Ce r am ic

VALUE (µF)

0.22

0.22

4.7

4.7

0.1

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