UNR111T データシートの表示（PDF） - Panasonic Corporation
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UNR111T Datasheet PDF : 5 Pages
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Composite Transistors
UP03396
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR111T + UNR1211
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
50
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Collector current
IC
100
mA
Tr2
Collector-base voltage
VCBO
−50
V
(Emitter open)
Collector-emitter voltage VCEO
−50
V
(Base open)
Collector current
IC
−100
mA
Overall
Total power dissipation
Junction temperature
Storage temperature
PT
125
mW
Tj
125
°C
Tstg −55 to +125 °C
(0.30)
5
4
0.20
+0.05
–0.02
Unit: mm
0.10±0.02
123
(0.50) (0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SSMini5-F2 Package
Marking Symbol: 6P
Internal Connection
(C1,B2)
(C2)
5
4
R1
22 kΩ
Tr1
Tr2
R2
R2
10 kΩ
1
47 kΩ
R1
2 10 kΩ 3
(E1) (B1) (E2)
Publication date: August 2004
SJJ00295AED
1
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