2N6426 データシートの表示（PDF） - ON Semiconductor

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2N6426

Darlington Transistors NPN Silicon

ON Semiconductor 

2N6426*, 2N6427

SMALL−SIGNALCHARACTERISTICS

20

4.0

VCE = 5.0 V

10

TJ = 25°C

f = 100 MHz

2.0 TJ = 25°C

7.0

Cibo

1.0

5.0

Cobo

0.8

0.6

3.0

0.4

2.0

0.04

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

0.2

0.5 1.0 2.0

0.5 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

200 k

100 k

70 k

50 k

TJ = 125°C

25°C

30 k

20 k

10 k

7.0 k

−55 °C

5.0 k

3.0 k

VCE = 5.0 V

2.0 k

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

3.0

2.5

IC = 10 mA 50 mA

2.0

TJ = 25°C

250 mA 500 mA

1.5

1.0

0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

1.6

TJ = 25°C

1.4

VBE(sat) @ IC/IB = 1000

1.2

VBE(on) @ VCE = 5.0 V

1.0

0.8

VCE(sat) @ IC/IB = 1000

0.6

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

−1.0 *APPLIES FOR IC/IB ≤ hFE/3.0

−2.0 *RqVC FOR VCE(sat)

−3.0

−4.0

qVB FOR VBE

−5.0

25°C TO 125°C

−55 °C TO 25°C

25°C TO 125°C

−55 °C TO 25°C

−6.0

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

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