2N6427G データシートの表示（PDF） - ON Semiconductor
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2N6427G Datasheet PDF : 6 Pages
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2N6426*, 2N6427
Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available**
• Device Marking: Device Type, e.g., 2N6426, Date Code
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
Vdc
40
Vdc
12
Vdc
500
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
MARKING
DIAGRAM
123
TO−92
CASE 29
STYLE 1
2N
642x
YWW
642x
Y
WW
Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*Preferred devices are recommended choices for future
use and best overall value.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 2
Publication Order Number:
2N6426/D
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