KSP75 データシートの表示（PDF） - Fairchild Semiconductor

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KSP75

PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

1000k

100k

VCE = -5V

10k

1k

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

200

VCE = -5V

100

10

1

-0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

-10

IC = 1000 IB

VBE(sat)

-1

VCE(sat)

-0.1

-1

-10

-100

-400

IC[mA], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10k

100µS

-1k

1mS

-100

1S

TC = 25OC

Ta = 25OC

-10

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2001 Fairchild Semiconductor Corporation

Rev. A1, July 2001

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