U642B データシートの表示（PDF） - Temic Semiconductors
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U642B Datasheet PDF : 6 Pages
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U642B
Thermal Resistance
Junction ambient
Parameters
DIP8
SO8
Electrical Characteristics
Symbol
RthJA
RthJA
Value
110
160
VBatt = 12 V, Tamb = 25°C, (see figure KEIN MERKER) unless otherwise specified.
Parameters
Test Conditions / Pins Symbol
Supply voltage
Supply current
Z-diode limitation
Overvoltage
Pin 8
VBatt
I8
V2
Threshold current
I1
Threshold voltage
Relay control output
Pin 7
VBatt
Saturation voltage
I7 = 100 mA
V7
I7 = 200 mA
Reverse current
I7
Park switch
Pin 6
W Internal pull-up resistance R6 = 10 k
R6
Switching threshold voltage
V6
Protection diode
I6 = –10 mA
V6
I6 = 10 mA
V6
Input C2
Pin 3
Internal resistance
W Interval input, R2 = 2.7 to 30 k
R3
Pin 2
Protection diode
I2 = –10 mA
V2
W WIWA Input, R5 = 10 k
I2 = 30 mA/10 ms
Pin 5
Switching threshold/
V5
Hysteresis
Protection diode
I5 = –10 mA
V
W W m I5 = 10 mA
Switching Characteristics, R4 = 47 k to 300 k , I4 = –150 A
Interval time
W R3 = 0 k
W R3 = 10 k
t2
Switch-ON time
After-wipe-time
W R4 = 130 k
Pin 5
ton
t5
Min.
Typ.
9
10
–7.6
–50
35
50
–3.3
–0.8
7.6
100
–0.8
7.6
–1.4/–5.4
–0.8
7.6
3.6
4
10.8
12
100
4.75
5.25
Max.
16.5
–1.0
–1.5
–0.1
4.4
13.2
5.75
Unit
K/W
K/W
Unit
V
mA
V
mA
V
V
mA
kW
V
V
V
W
V
V
V
s
ms
s
4 (6)
TELEFUNKEN Semiconductors
Rev. A1, 13-Feb-97
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