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2N6109G(2014) データシートの表示(PDF) - ON Semiconductor

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2N6109G
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2N6109G Datasheet PDF : 5 Pages
1 2 3 4 5
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
15
10
0.1 ms
7.0
0.5 ms
5.0
3.0
dc
2.0
0.1
ms
1.0
0.7
0.5
0.3
0.2
0.15
1.0
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
5.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
3.0
2.0
ts
1.0
0.7
0.5
0.3
tr
0.2
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
0.07
0.05
0.07 0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
5.0 7.0
300
200
TJ = 25°C
Cib
100
70
Cob
50
30
0.5
1.0
2.0 3.0 5.0
10
20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
ORDERING INFORMATION
Device
2N6107G
2N6109G
2N6111G
2N6288G
2N6292G
Device Marking
2N6107
2N6109
2N6111
2N6288
2N6292
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
http://onsemi.com
4
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50 Units / Rail
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