MJF6668 データシートの表示（PDF） - ON Semiconductor

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MJF6668

Complementary Power Darlingtons

ON Semiconductor 

MJF6388 (NPN),

MJF6668 (PNP)

Preferred Device

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for general−purpose amplifiers and switching

applications, where the mounting surface of the device is required to

be electrically isolated from the heatsink or chassis.

Features

• Isolated Overmold Package, TO−220 Type

• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and

TIP107

• 100 VCEO(sus)

• 10 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc

• High Isolation Voltage (up to 4500 VRMS)

• Case 221D is UL Recognized at 3500 VRMS: File #E69369

• Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage

VCEO

100

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (Note 1)

VISOL

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Test No. 1 Per Figure 14

4500

Test No. 2 Per Figure 15

3500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Test No. 3 Per Figure 16

1500

(for 1 sec, R.H. < 30%, TA = 25_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak (Note 2)

IC

10

Adc

15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current − Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation (Note 3) @ TC = 25_C

Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C

Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

IB

PD

PD

TJ, Tstg

1.0

40

0.31

2.0

0.016

–65 to +150

Adc

W

W/_C

W

W/_C

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Max

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case (Note 3) RqJC

4.0

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient

RqJA

62.5

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Lead Temperature for Soldering Purposes

TL

260

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Proper strike and creepage distance must be provided.

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

3. Measurement made with thermocouple contacting the bottom insulated

surface (in a location beneath the die), the devices mounted on a heatsink with

thermal grease and a mounting torque of ≥ 6 in. lbs.

http://onsemi.com

COMPLEMENTARY SILICON

POWER DARLINGTONS

10 AMPERES

100 VOLTS, 40 WATTS

MARKING

DIAGRAM

1

2

3

TO−220 FULLPACK

CASE 221D

STYLE 2

UL RECOGNIZED

MJF6xy8G

AYWW

MJF6xy8

G

A

Y

WW

= Specific Device Code

x = 3 or 6

y = 6 or 8

= Pb−Free Package

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

Device

MJF6388

MJF6388G

MJF6668

MJF6668G

Package

Shipping

TO−220 FULLPACK 50 Units/Rail

TO−220 FULLPACK

(Pb−Free)

TO−220 FULLPACK

50 Units/Rail

50 Units/Rail

TO−220 FULLPACK 50 Units/Rail

(Pb−Free)

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

1

April, 2006 − Rev. 8

Publication Order Number:

MJF6388/D

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