MMBD717LT1(2001) データシートの表示（PDF） - ON Semiconductor
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MMBD717LT1 Datasheet PDF : 8 Pages
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ON Semiconductort
Common Anode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 1 mAdc
ANODE
3
CATHODE
1
2
CATHODE
MMBD717LT1
ON Semiconductor Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 419–04, STYLE 4
SOT–323 (SC–70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
PF
@ TA = 25°C
Derate above 25°C
Operating Junction
TJ
Temperature Range
Storage Temperature Range
Tstg
DEVICE MARKING
MMBD717LT1 = B3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 10 V)
(For each individual diode while the second diode is unbiased)
V(BR)R
CT
IR
Forward Voltage
VF
(IF = 1.0 mAdc)
Value
20
200
1.6
–55 to +150
–55 to +150
Min
Typ
20
—
—
2.0
—
0.05
—
0.28
Unit
Volts
mW
mW/°C
°C
°C
Max
Unit
—
Volts
2.5
pF
1.0
µAdc
0.37
Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 6
Publication Order Number:
MMBD717LT1/D
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