M1MA141WAT3 データシートの表示（PDF） - ON Semiconductor
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M1MA141WAT3 Datasheet PDF : 2 Pages
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ON Semiconductort
Common Anode Silicon
Dual Switching Diode
M1MA141WAT1
M1MA142WAT1
This Common Anode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–70 package which is designed for low
power surface mount applications.
• Fast trr, < 10 ns
• Low CD, < 15 pF
• Available in 8 mm Tape and Reel
Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel.
ON Semiconductor Preferred Devices
3
1
2
CASE 419–04, STYLE 4
SC–70/SOT–323
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA141WAT1
VR
M1MA142WAT1
40
Vdc
80
Peak Reverse Voltage
M1MA141WAT1
VRM
40
Vdc
M1MA142WAT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
IFM
225
mAdc
340
Peak Forward Surge Current
Single
Dual
IFSM(1)
500
mAdc
750
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
PD
150
mW
TJ
150
°C
Tstg
–55 ~ +150
°C
Symbol
Condition
Reverse Voltage Leakage Current M1MA141WAT1
IR
M1MA142WAT1
Forward Voltage
Reverse Breakdown Voltage
VF
M1MA141WAT1
VR
M1MA142WAT1
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
Diode Capacitance
Reverse Recovery Time (Figure 1)
1. t = 1 SEC
2. trr Test Circuit
CD
VR = 0, f = 1.0 MHz
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
ANODE
3
1
2
CATHODE
Min
Max
—
0.1
—
0.1
—
1.2
40
—
80
—
—
15
—
10
Unit
µAdc
Vdc
Vdc
pF
ns
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 3
433
Publication Order Number:
M1MA141WAT1/D
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