TIM1011-2L データシートの表示（PDF） - Toshiba

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TIM1011-2L

MICROWAVE POWER GaAs FET

Toshiba 

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )

CHARACTERISTICS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation (Tc= 25 °C)

Channel Temperature

Storage

SYMBOL

VDS

VGS

IDS

PT

Tch

Tstg

RATING

15

-5

2.6

15

175

-65 ∼ +175

TIM1011-2L

UNIT

V

V

A

W

°C

°C

PACKAGE OUTLINE (2-9D1B)

4-R2.4

c

d

d

e

0.5±0.15

13.0±0.3

17.0 MAX.

8.5 MAX.

Unit : mm

cGate

dSource

eDrain

HANDLING PRECAUTIONS FOR PACKAGED TYPE

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

2

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