TIM1011-15L データシートの表示（PDF） - Toshiba
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TIM1011-15L Datasheet PDF : 4 Pages
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FEATURES
･BROAD BAND INTERNALLY MATCHED FET
･HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz
･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz
･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 30.0dBm
Single Carrier Level
･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-15L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB
IDS1
G
VDS= 9V
IDSset= 4.0A
f = 10.7 to 11.7GHz
UNIT
dBm
dB
A
dB
Power Added Efficiency
add
%
3rd Order Intermodulation
Distortion
Drain Current
IM3
IDS2
Two Tone Test
dBc
Po= 30.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
41.0
6.0
-42
TYP. MAX.
42.0
7.0
4.5
5.5
±0.8
31
-45
4.5
5.5
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 4.8A
VDS= 3V
IDS= 145mA
VDS= 3V
VGS= 0V
VGSO IGS= -145A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
3.0
V
-1.5 -3.0 -4.5
A
10.0 11.5
V
-5
°C/W
2.0
2.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170921_No1142 Page: 1 / 4
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