TICP106D データシートの表示（PDF） - Power Innovations Ltd

部品番号

コンポーネント説明

一致するリスト

TICP106D

SILICON CONTROLLED RECTIFIERS

Power Innovations Ltd 

TICP106 SERIES

SILICON CONTROLLED RECTIFIERS

MARCH 1988 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

IDRM

IRRM

IGT

VGT

IH

VTM

Repetitive peak

off-state current

Repetitive peak

reverse current

Gate trigger current

Gate trigger voltage

Holding current

Peak on-state

voltage

VD = rated VDRM

VR = rated VRRM

VAA = 6 V

VAA = 6 V

VAA = 6 V

ITM = 1 A

RGK = 1 kΩ

IG = 0

RL = 100 Ω

RL = 100 Ω

RGK = 1 kΩ

RGK = 1 kΩ

(see Note 5)

20

µA

200

µA

tp(g) ≥ 20 µs

60 200

µA

tp(g) ≥ 20 µs

0.4

1

V

Initiating IT = 10 mA

5

mA

1.5

V

NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

PRODUCT INFORMATION

2

Share Link: