TGA4506-SM データシートの表示（PDF） - TriQuint Semiconductor

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TGA4506-SM

K Band Packaged Low Noise Amplifier

TriQuint Semiconductor 

Advance Product Information

November 14, 2005

TGA4506-SM

TABLE II

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C Nominal)

PARAMETER

Drain Voltage, Vd

Drain Current, Id

Gate Voltage, Vg

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Noise Figure, NF

Output Power @ 1 dB Compression Gain, P1dB

TYPICAL

3.5

60

-0.5 to 0.0

21

11

15

2.5

10

UNITS

V

mA

V

dB

dB

dB

dB

dBm

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

RθJC Thermal

Resistance

(channel to backside

of package)

Vd = 3.5V

ID = 0.06 A

Pdiss = 0.21 W

TCH

(oC)

112.7

RTJC

(qC/W)

132

TM

(HRS)

1.52E+6

Note: Package backside SnPb soldered to carrier at 85°C baseplate temperature.

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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