T14L2M16A データシートの表示（PDF） - Taiwan Memory Technology

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T14L2M16A

128K X 16 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T14L2M16A

AC CHARACTERISTICS(Vcc=3.0 to 3.6V, VSS = 0V, Ta = 0 ~ +70 °C )

(1) READ CYCLE

PARAMETER

SYM.

-8

Min Max

Read Cycle Time

tRC

8

-

Address Access Time

tAA

-

8

Chip Enable Access Time

tACE

-

8

Output Enable Access Time

tOE

-3

Output Hold from Address Change tOH 3 -

Chip Enable to Output in Low-Z

tLZ

3-

Chip Disable to Output in High-Z

tHZ

-3

Output Enable to Output in Low-Z tOLZ 0 -

Output Disable to Output in High-Z tOHZ - 3

LB , UB Access Time

tBA

-3

LB , UB Enable to Output in Low-Z tBLZ 0 -

LB , UB Disable to Output in High-Z tBHZ - 3

-10

Min Max

10 -

- 10

- 10

-4

3-

3-

-4

0-

-4

-4

0-

-4

-12

Min Max

12 -

- 12

- 12

-5

3-

3-

-5

0-

-5

-5

0-

-5

-15

UNIT

Min Max

15 - ns

- 15 ns

- 15 ns

- 6 ns

3 - ns

3 - ns

- 6 ns

0 - ns

- 6 ns

- 6 ns

0 - ns

- 6 ns

(2)WRITE CYCLE

PARAMETER

Write Cycle Time

Chip Enable to Write End

Address Valid to Write End

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to Write End

Data Hold Time

Write Enable to Output in High-Z

Output Active from Write End

SYM.

-8

Min Max

tWC

8

-

tCW

7

-

tAW

7

-

tAS

0

-

tWP

6

-

tWR

0

-

tDW

4

-

tDH

0

-

tWHZ -

3

tOW

0

-

-10

Min Max

10 -

8-

8-

0-

7-

0-

5-

0-

-4

0-

-12

Min Max

12 -

8-

8-

0-

8-

0-

6-

0-

-5

0-

-15

UNIT

Min Max

15 - ns

10 - ns

10 - ns

0 - ns

10 - ns

0 - ns

7 - ns

0 - ns

- 6 ns

0 - ns

TM Technology Inc. reserves the right

P. 6

to change products or specifications without notice.

Publication Date: AUG. 2002

Revision:0.A

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