STV160NF03LA データシートの表示（PDF） - STMicroelectronics
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STV160NF03LA Datasheet PDF : 8 Pages
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STV160NF03LA
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 15 V, ID = 80 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 24 V, ID = 160 A,
VGS = 10 V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tr(Voff)
tf
tc
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V, ID = 80 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
Vclamp = 24 V, ID = 40 A
RG = 4.7Ω, VGS = 10V
Min. Typ. Max. Unit
30
ns
380
ns
123
160
nC
21
nC
40
nC
Min.
Typ.
100
150
Max.
Unit
ns
ns
95
ns
35
ns
75
ns
110
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 160 A, VGS = 0
trr
Reverse Recovery Time
ISD = 160A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
Typ.
80
180
4.5
Max.
160
640
1.5
Unit
A
A
V
ns
nC
A
3/8
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