STV160NF03L データシートの表示（PDF） - STMicroelectronics
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STV160NF03L Datasheet PDF : 9 Pages
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STV160NF03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
0.71
Rthj-amb Thermal Resistance Junction-ambient Max
50
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 80 A
VGS = 10 V, ID = 45 A
VGS = 8 V, ID = 80 A
VGS = 5 V, ID = 40 A
VGS = 10 V, ID=80 A;Tj = 175 °C
VGS = 8 V, ID=80 A; Tj = 175 °C
VGS = 5 V, ID=40 A; Tj = 175 °C
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
160
Typ.
1.9
1.86
2
4
Max.
2.8
2.8
3.8
6.7
6.4
7.8
12.8
Unit
V
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Rg
Ciss
Coss
Crss
Ciss
Coss
Crss
LS
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Internal Source Inductance
LD
Internal Drain Inductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 80 A
VDS = 0 V, f = 1 MHz, VGS = 0
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
210
0.5
4700
1580
240
Max.
Unit
S
Ω
pF
pF
pF
VDS = 0 V, f = 1 MHz, VGS = 0
6500
9500
4000
pF
pF
pF
From the Lead End (6mm from
Package Body) to the Die
Center
4
nH
Not Available on Surface Mounting
Package
2/9
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