STTH1003S データシートの表示（PDF） - STMicroelectronics
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STTH1003S Datasheet PDF : 7 Pages
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STTH1003S
Table 4:Thermal Parameters
Symbol
Parameter
Rth(j-c) Junction to case
Package
DPAK
D2PAK
TO220FP
Value
4
4
6
Unit
°C/W
Table 5: Static Electrical Characteristics
Symbol
Parameter
Test conditions
Min. Typ
IR *
Tj = 25°C
Reverse leakage current
Tj = 125°C
VR = VRRM
10
VF ** Forward voltage drop
Tj = 25°C
Tj = 125°C
IF = 10A
0.9
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.86 x IF(AV) + 0.024 IF2(RMS)
Table 6: Recovery Characteristics
Max.
10
100
1.30
1.1
Unit
µA
V
Symbol
Parameter
Test conditions
IF = 0.5A Irr = 0.25A
trr
Reverse recovery time
Tj = 25°C
IR = 1A
IF = 1A
VR = 30V
dIF/dt = -50 A/µs
tfr
Forward recovery time
Tj = 25°C
IF = 10A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
IRM
Sfactor
Reverse recovery current
Softness factor
Tj = 125°C
IF = 10A VCC = 200V
dIF/dt = 200 A/µs
VFP Peak forward voltage Tj = 25°C IF = 10A dIF/dt = 100 A/µs
Min.
Typ Max.
13 17
28 35
200
5.7 7.5
0.3
2.5 3.5
Unit
ns
ns
A
V
Figure 1: Forward voltage drop versus current
(maximum values)
IFM(A)
100.0
10.0
Tj=75°C
Tj=125°C
Tj=25°C
1.0
VFM(V)
0.1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Figure 2: Peak reverse recovery current versus
dIF/dt (90% confidence)
IRM(A)
16
14
VR=200V
Tj=125°C
12
10
8
IF = 2xIF(AV)
IF = IF(AV)
IF = 0.5xIF(AV)
6
4
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
2/8
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