STTH312 データシートの表示（PDF） - STMicroelectronics
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STTH312 Datasheet PDF : 8 Pages
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STTH312
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
S Softness factor
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 3 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 3 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 3 A dIF/dt = 50 A/µs
VFR = 1.5 x VFmax, Tj = 25° C
IF = 3 A, dIF/dt = 50 A/µs,
Tj = 25° C
Min. Typ Max. Unit
115
ns
55 80
9.5 14
A
2
350 ns
12
V
Figure 1.
P(W)
7
6
Conduction losses versus
average current
δ = 0.1 δ = 0.2
δ = 0.5
5
δ = 0.05
4
δ=1
3
2
T
1
IF(AV)(A)
δ=tp/T
tp
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 2. Forward voltage drop versus
forward current
IFM(A)
50
45
40
Tj=150°C
(maximum values)
35
30
Tj=150°C
(typical values)
25
Tj=25°C
(maximum values)
20
15
10
5
VFM(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
24
22
VR=600V
Tj=125°C
20
IF=2 x IF(AV)
18
16
IF=IF(AV)
14
12
IF=0.5 x IF(AV)
10
8
6
4
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
3/8
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