STTH3002CT(2004) データシートの表示（PDF） - STMicroelectronics
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STTH3002CT Datasheet PDF : 7 Pages
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STTH3002C
Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
120
100
IM
T
80
δ=tp/T
tp
P = 30W
60
P = 15W
40
P = 10W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
IFM(A)
100
90
80
70
Tj=150°C
60
50
40
30
Tj=25°C
20
10
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100
90
80
70
Tj=150°C
60
50
40
30
Tj=25°C
20
10
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
Single pulse
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
C(pF)
1000
100
10
0
50
VR(V)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
150
200
Qrr(nC)
250
225
IF=15A
VR=160V
200
175
150
125
100
75
50
25
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
3/7
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