STTH16003 データシートの表示（PDF） - STMicroelectronics
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STTH16003 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH16003
Table 2.
Symbol
Absolute ratings (limiting values, per diode, Tamb = 25 °C unless otherwise stated)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
300
V
180
A
Per diode
60
Tc = 85°C δ = 0.5
A
Per device
160
IFSM
IRSM
Tstg
Tj
Surge non repetitive forward current
Non repetitive peak reverse current
Storage temperature range
tp = 10 ms Sinusoidal
tp = 100 µs square
Maximum operating junction temperature
800
A
5
A
-55 to + 150 °C
150
°C
Table 3. Thermal parameters
Symbol
Rth(j-c)
Rth(c)
Junction to case
Coupling
Parameter
Per diode
Total
Maximum
0.7
0.4
0.1
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25 °C
Tj= 125 °C
Tj = 25 °C
Tj = 125 °C
VR = 300 V
IF = 80 A
200
µA
0.2
2
mA
1.2
V
0.8
0.95
1. to evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0025 IF2(RMS)
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