STTH16003TV データシートの表示（PDF） - STMicroelectronics

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STTH16003TV

HIGH FREQUENCY SECONDARY RECTIFIER

STMicroelectronics 

STTH16003TV

THERMAL RESISTANCES

Symbol

Rth (j-c) Junction to case

Rth (c)

Parameter

Per diode

Total

Coupling

When the diodes 1 and 2 are used simultaneously:

∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)

Value

0.7

0.4

0.1

Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min.

IR * Reverse leakage

current

VR = 300 V

Tj = 25°C

Tj = 125°C

VF ** Forward voltage drop IF = 80 A

Tj = 25°C

Tj = 125°C

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 0.75 x IF(AV) + 0.0025 x IF2(RMS)

Typ.

0.2

0.8

Max.

200

2

1.2

0.95

Unit

µA

mA

V

RECOVERY CHARACTERISTICS

Symbol

Tests conditions

trr

IF = 0.5 A Irr = 0.25 A

IR = 1A

tfr

VFP

Sfactor

IRM

IF = 1 A dIF/dt = - 50 A/µs VR = 30 V

IF = 80 A

dIF/dt = 200 A/µs

VFR = 1.1 x VF max.

Vcc = 200 V

IF = 80 A

dIF/dt = 200 A/µs

Tj = 25°C

Tj = 25°C

Tj = 125°C

Min. Typ. Max. Unit

60

ns

80

1000 ns

5

V

0.3

-

16

A

2/5

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