STTH102-Y データシートの表示（PDF） - STMicroelectronics
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STTH102-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH102-Y
Table 2. Absolute rating (limiting values)
Symbol
Parameter
VRRM
IF(AV)
IFSM
Tstg
Tj
dV/dt
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Critical rate of rise of reverse voltage
TL = 148 °C δ = 0.5
tp = 10 ms sinusoidal
Value
200
1
40
-65 to + 175
-40 to +175
10000
Unit
V
A
A
°C
°C
V/µs
Table 3. Thermal resistance
Symbol
Rth(j-l) Junction to lead
Parameter
Value
30
Table 4. Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max.
IR (1) Reverse leakage current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
1
1
25
VF(2) Forward voltage drop
Tj = 25 °C
IF = 700 mA
IF = 1 A
0.90
0.97
Tj = 125 °C IF = 1 A
0.68 0.78
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.130 IF2(RMS)
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Tests conditions
trr
Reverse recovery time Tj = 25 °C
IF = 0.5 A Irr = 0.25 A
IR = 1 A
tfr
Forward recovery time Tj = 25 °C
IF = 1 A dIF/dt = 50 A/ms
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25 °C IF = 1 A dIF/dt = 50 A/ms
Min.
Typ.
12
50
1.8
Max.
20
Unit
°C/W
Unit
µA
V
Unit
ns
ns
V
2/7
Doc ID 17982 Rev 1
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