STS3DPFS40 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

STS3DPFS40

P-CHANNEL 40V - 0.070Ω - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

STMicroelectronics 

STS3DPFS40

THERMAL DATA

Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET

Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum

Tstg

Storage Temperature Range

Tl

Junction Temperature

(*) Mounted on FR-4 board (Steady State)

62.5

100

-65 to 150

150

°C/W

°C/W

°C

°C

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

40

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

ID(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

On State Drain Current

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 1.5 A

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min. Typ. Max. Unit

2

3

4

V

0.070 0.1

Ω

3

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 1.5 A

6

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1190

pF

Coss

Output Capacitance

200

pF

Crss

Reverse Transfer

Capacitance

56

pF

2/6

Share Link: