STS2300 データシートの表示（PDF） - Samhop Mircroelectronics

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STS2300

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics 

S TS 2300

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min TypC Max Unit

5 DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =1.25A

0.825 1.2 V

Notes

a.S urface Mounted on FR 4 Board, t 10sec.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

c.Guaranteed by design, not subject to production testing.

10

V GS =10.5~2.5V

8

6

4

V GS =1.5V

2

0

0

12

3

4

5

6

V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

25

25 C

20

T j=125 C

15

-55 C

10

5

0

0.0 0.5

1 1.5 2 2.5 3

V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1000

800

C is s

600

400

200

0

05

10 15 20

C oss

C rss

25 30

V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

2.2

V G S =4.5V

ID=5A

1.8

1.4

1.0

0.6

0.2

0

-50 -25 0 25 50 75 100 125

T j( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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