STP8NM50 データシートの表示（PDF） - STMicroelectronics

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STP8NM50

N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET

STMicroelectronics 

STP8NM50 - STP8NM50FP

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM (2)

PTOT

dv/dt(3)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Value

Unit

TO-220 TO-220FP

± 30

8

5

32

100

0.8

15

8 (1)

5 (1)

32 (1)

25

V

A

A

A

W

W/°C

V/ns

--

2500

V

-65 to 150

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-amb max

Tl

Maximum lead temperature for soldering purpose

TO-220 TO-220FP Unit

1.25

5

62.5

300

°C/W

°C/W

°C

Table 3. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, ID=IAR, VDD= 50V)

Max value

Unit

2.5

A

200

mJ

3/14

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