STP60NF10(2004) データシートの表示（PDF） - STMicroelectronics

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STP60NF10
(Rev.:2004)

N-CHANNEL 100V - 0.019
- 80A TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STP60NF10

W N-CHANNEL 100V - 0.019 - 80A TO-220

STripFET™ II POWER MOSFET

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TYPE

VDSS

RDS(on)

ID

STP60NF10

100 V < 0.023 W

80 A

W ■ TYPICAL RDS(on) = 0.019

■ EXTREMELY HIGHL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

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DESCRIPTION

This MOSFET series realized with STMicroelec-

tronics unique STripFET™ process has specifical-

ly been designed to minimize input capacitance

and gate charge. It is therefore suitable as primary

switch in advanced high-efficiency, high-frequency

isolated DC-DC converters for Telecom and Com-

puter applications. It is also intended for any appli-

cations with low gate drive requirements.

APPLICATIONS

■ HIGH EFFICIENCY DC/DC CONVERTERS,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

■ MOTOR CONTROL

3

2

1

TO-220

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UhiyrÃ!)ÃOrdering Information

SALES TYPE

STP60NF10

MARKING

P60NF10

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Symbol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

W Drain-gate Voltage (RGS = 20 k )

VGS

Gate- source Voltage

ID(*)

Drain Current (continuous) at TC = 25°C

ID

IDM(œ)

Drain Current (continuous) at TC = 100°C

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

œ)( Pulse width limited by safe operating area.

(**) Current Limited by Package

PACKAGE

TO-220

PACKAGING

TUBE

Value

Unit

100

V

100

V

± 20

V

80

A

66

A

320

A

300

W

2

W/°C

16

V/ns

485

mJ

-55 to 175

°C

(1) ISD ˆ80A, di/dt ˆ300A/µs, VDD ˆ V(BR)DSS, Tj ˆ TJMAX

(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V

November 2004

Sr‰Ã1

1/9

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