P16NF06 データシートの表示（PDF） - STMicroelectronics

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P16NF06

N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

STP16NF06 - STP16NF06FP

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 16A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15A,

di/dt = 100A/µs,

VDD = 30V, Tj = 150°C

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

16

A

64

A

1.3 V

50

ns

88

nC

3.5

A

5/14

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