STB19NM65N データシートの表示（PDF） - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220/I²PAK

D²PAK/TO-247

TO-220FP

Unit

VDS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC = 100 °C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

dv/dt (3) Peak diode recovery voltage slope

VISO

Tstg

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

Storage temperature

Tj

Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤15.5 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS

650

± 25

15.5

10

15.5(1)

10(1)

62

62(1)

150

35

15

V

V

A

A

A

W

V/ns

--

2500

V

-55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220 I²PAK D²PAK TO-247 TO-220FP

Rthj-case

Rthj-amb

Rthj-pcb

Tl

Thermal resistance junction-

case Max

Thermal resistance junction-

amb Max

Thermal resistance junction-

pcb max

Maximum lead temperature for

soldering purpose

0.83

62.5

--

50

--

--

30

--

300

3.6 °C/W

62.5 °C/W

--

°C/W

°C

3/19

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