STB90NF03 データシートの表示（PDF） - STMicroelectronics
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STB90NF03 Datasheet PDF : 9 Pages
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STB95NF03
N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB95NF03
30 V <0.007 Ω 80 A
s TYPICAL RDS(on) = 0.0065 Ω
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID(∗)
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
March 2003
Value
30
30
± 20
80
80
320
150
1
3.0
720
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 47.5A, VDD = 25V
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