STB200NF04T4 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
STB200NF04T4 Datasheet PDF : 15 Pages
| |||
STP200NF04 - STB200NF04 - STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
Test Conditions
Min.
gfs (1) Forward Transconductance VDS = 15 V, ID = 90 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Table 7: Switching On/Off
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 20 V, ID = 90 A
RG = 4.7Ω VGS = 10 V
(see Figure 20)
VDD = 20V, ID = 120 A,
VGS = 10V
(see Figure 23)
Min.
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 120 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see Figure 21)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
150
5100
1600
600
Typ.
30
320
140
120
170
30
62
Typ.
85
190
4.5
Max.
Max.
210
Max.
120
480
1.3
Unit
S
pF
pF
pF
Unit
ns
ns
ns
ns
nC
nC
nC
Unit
A
A
V
ns
nC
A
3/15
Share Link: 