STB12NM50 データシートの表示（PDF） - STMicroelectronics

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STB12NM50

N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=12A, VGS=0

ISD=12A,

di/dt = 100A/µs,

VDD=100V, Tj=25°C

(see Figure 16)

ISD=12A,

di/dt = 100A/µs,

VDD=100V, Tj=150°C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

11 A

48 A

1.5 V

270

ns

2.23

µC

16.5

A

340

ns

3

µC

18

A

5/17

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