STB20NM50T4 データシートの表示（PDF） - STMicroelectronics
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STB20NM50T4
STMicroelectronics
STB20NM50T4 Datasheet PDF : 16 Pages
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2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Table 6. Switching times
Symbol
Parameter
td(on)
tr
tr(Voff)
tf
tc
Turn-on Delay Time
Rise Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 16)
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Table 7. Source drain diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD=20A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=20A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=20A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
Min.
Min.
Typ. Max. Unit
24
ns
16
ns
9
ns
8.5
ns
23
ns
Typ. Max. Unit
20
A
80
A
1.5
V
350
ns
4.6
µC
26
A
435
ns
5.9
µC
27
A
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS
4/16
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