STB140NF55T4 データシートの表示（PDF） - STMicroelectronics
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STB140NF55T4 Datasheet PDF : 11 Pages
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STB140NF55 STP140NF55
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 27.5 V
ID = 40 A
30
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
150
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
VDD= 44V ID= 80A VGS= 10V
142
nC
Qgs
Gate-Source Charge
27
nC
Qgd
Gate-Drain Charge
55
nC
Table 9: SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
VDD = 27.5 V
ID = 40 A
125
ns
RG = 4.7 Ω
VGS = 10 V
45
ns
(Resistive Load, Figure 3)
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
90
275
6.5
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
3/11
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