SST2605(2002) データシートの表示（PDF） - Secos Corporation.

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SST2605
(Rev.:2002)

-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode Power Mos.FET

Secos Corporation. 

Elektronische Bauelemente

Characteristics Curve

SST2605

-4.0A -30V,RDS(ON) 80mΩ

P-Channel Enhancement Mode Power Mos.FET

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristics of

Reverse Diode

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Any changing of specification will not be informed individual

Page 3 of 4

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