SST2603(2010) データシートの表示（PDF） - Secos Corporation.

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SST2603
(Rev.:2010)

-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET

Secos Corporation. 

Elektronische Bauelemente

SST2603

-5A, -20V,RDS(ON) 65mΩ

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

The SST2603 utilized advanced processing techniques to achieve the lowest

possible on-resistance, extremely efficient and cost-effectiveness device.

The SST2603 is universally used for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

Features

* Small package outline

* Simple drive requirement

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current 3

Continuous Drain Current 3

Pulsed Drain Current 1,2

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

D

G

S

Symbol

VDS

VGS

ID@TA=25 oC

ID@TA=70 oC

IDM

PD@TA=25 oC

Tj, Tstg

SOT-26

1.90REF

0.95REF 0.95REF

0.45 REF

2.60

3.00

1.2 REF

0.60 REF

1.40

1.80

0.30

0.55

2.70

0.10 Max

3.10

o

0

0.7

1.45

o

10

Dimensions in millimeters

Date Code

D DS

6 54

2603

12 3

DD G

Ratings

-20

±12

-5

-4

-20

2

0.016

-55~+150

Unit

V

V

A

A

A

W

W / oC

oC

Thermal Data

Parameter

Thermal Resistance Junction-ambient 3

Max.

Symbol

Rthj-a

Ratings

62.5

Unit

oC /W

http://www.SeCoSGmbH.com/

15-Jun-2010 Rev. C

Any changing of specification will not be informed individual

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