SSD20P04-60D データシートの表示（PDF） - Secos Corporation.
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SSD20P04-60D Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSD20P04-60D
P-Ch Enhancement Mode Power MOSFET
22A, -40V, RDS(ON) 69mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
-1
IGSS
-
-
-
VDS= VGS, ID = -250 μA
-
±100 nA VDS = 0V, VGS= ±25V
Zero Gate Voltage Drain Current
On-State Drain Current a
-
-
IDSS
-
-
ID(on)
-41
-
-1
VDS= -24V, VGS= 0V
μA
-5
VDS= -24V, VGS=0V, TJ=55°C
-
A VDS = -5V, VGS= -10V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
-
RDS(ON)
-
-
69
VGS= -10V, ID= -22A
mΩ
-
106
VGS= -4.5V, ID= -18A
gfs
-
31
-
S VDS= -15V, ID= -22A
VSD
-
-0.7
-
Dynamic b
V IS= -41 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
-
10
-
-
2.2
-
VDS = -15 V
nC VGS = -4.5 V
Qgd
-
2.5
-
ID = -22 A
Switching
Turn-on Delay Time
Td(on)
-
10
-
Rise Time
Tr
-
2.8
-
Turn-off Delay Time
Td(off)
-
53.6
-
Fall Time
Tf
-
46
-
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
VDD= -15 V
ID= -24 A
nS
RVGL=EN1=5
-10
V
RG= 6
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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