SSD20P03-60 データシートの表示（PDF） - Secos Corporation.
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SSD20P03-60 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSD20P03-60
P-Ch Enhancement Mode Power MOSFET
24A, -30V, RDS(ON) 59mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
-1
-
-
-
-
-
-
-
-41
-
-
-
-
-
-
31
-
-0.7
Dynamic b
-
±100
-1
-5
-
59
95
-
-
VDS= VGS, ID = -250 μA
nA VDS = 0V, VGS= ±20V
VDS= -24V, VGS= 0V
μA
VDS= -24V, VGS=0V, TJ=55°C
A VDS = -5V, VGS= -10V
VGS= -10V, ID= -24A
mΩ
VGS= -4.5V, ID= -19A
S VDS= -15V, ID= -24A
V IS= -41 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
CISS
COSS
CRSS
-
6.4
-
-
1.9
-
VDS = -15 V
nC VGS = -4.5 V
-
2.5
-
ID = -24 A
-
520
-
-
130
-
-
70
-
VGS = 0 V
pF VDS = -15 V
f = 1MHz
Switching
Turn-on Delay Time
Td(on)
-
10
-
Rise Time
Tr
-
2.8
-
Turn-off Delay Time
Td(off)
-
53.6
-
Fall Time
Tf
-
46
-
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
VIDD=D=-2-41A5 V
nS VGEN = -10 V
RL= 15
RG= 6
http://www.SeCoSGmbH.com/
18-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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