BC212BRL1G データシートの表示（PDF） - ON Semiconductor
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BC212BRL1G Datasheet PDF : 4 Pages
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BC212, BC212B, BC213,
BC214
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC212
BC213
BC214
Collector-Base Voltage
BC212
BC213
BC214
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RθJA
RθJC
Value
–50
–30
–30
–60
–45
–45
–5.0
–100
Unit
Vdc
Vdc
Vdc
mAdc
350
mW
2.8
mW/°C
1.0
8.0
–55 to
+150
Watts
mW/°C
°C
Max
Unit
357
°C/W
125
°C/W
© Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev. 1
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
23
TO–92
CASE 29
STYLE 17
MARKING DIAGRAMS
BC2
1xx
YWW
BC21xx = Specific Device Code
xx
= 2, 2B, 3 or 4
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
BC212
TO–92
5000 Units/Box
BC212B
TO–92
5000 Units/Box
BC212BRL1
TO–92 2000/Tape & Reel
BC212BZL1
TO–92 2000/Ammo Pack
BC213
TO–92
5000 Units/Box
BC214
TO–92
5000 Units/Box
BC214RL1
TO–92 2000/Tape & Reel
Publication Order Number:
BC212/D
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