SKB10N60A(2002) データシートの表示（PDF） - Infineon Technologies

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SKB10N60A
(Rev.:2002)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP10N60A, SKB10N60A

SKW10N60A

500ns

1400nC

400ns

300ns

200ns

100ns

IF = 20A

IF = 5A

IF = 10A

1200nC

1000nC

800nC

600nC

400nC

200nC

IF = 20A

IF = 10A

IF = 5A

0ns

100A /µs 300A /µs 500A/µs 700A /µs 900A /µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

0nC

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

20A

1 0 0 0 A /µs

16A

12A

IF = 20A

IF = 10A

IF = 5A

8A

4A

0A

100A /µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

8 0 0 A /µs

6 0 0 A /µs

4 0 0 A /µs

2 0 0 A /µs

0 A /µs

10 0A /µs 300A /µs 500 A /µs 70 0A /µs 9 00A /µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

9

Sep-02

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