SB1100-T3 データシートの表示（PDF） - Won-Top Electronics

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SB1100-T3

1.0A SCHOTTKY BARRIER DIODE

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1.0

0.5

0

25

50

75

100

125

150

TL, LEAD TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

40

Single Half Sine-Wave

(JEDEC Method)

Tj = 150°C

30

20

20

10

SB120 - SB140

SB150 - SB160

1.0

SB180 - SB1100

0.1

0.0

0.2

0.4

Tj = 25°C

IF Pulse Width = 300µs

0.6

0.8

1.0

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

1000

Tj = 25°C

f = 1.0MHz

100 SB150 - SB1100

SB120 - SB140

10

0

1

10

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

10

0.1

1

10

100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

100

10

Tj = 100°C

1.0

Tj = 75°C

0.1

0.01 Tj = 25°C

0.001

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

SB120 – SB1100

2 of 4

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