S1A(2011) データシートの表示（PDF） - Vishay Semiconductors
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S1A Datasheet PDF : 4 Pages
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New Product
S1A thru S1M
Vishay General Semiconductor
100
TJ = 25 °C
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.8
1.2
1.6
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
1000
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
S1K, S1M
100
10
1
0.01
S1A thru S1J
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89272 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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