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HM-65642/883 データシートの表示(PDF) - Intersil

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HM-65642/883 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
HM-65642/883
TABLE 2. HM-65642/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
LIMITS
PARAMETERS
Data Hold Time
SYMBOL
(NOTES 1, 2)
CONDITIONS
TWHDX VCC = 4.5V and
5.5V
TE1HDX VCC = 4.5V and
5.5V
TE2LDX VCC = 4.5V and
5.5V
GROUP A
SUB-
GROUPS
TEMPERATURE
9, 10, 11 -55oC TA +125oC
HM-
65642B/883
MIN MAX
5
-
HM-
65642/883
MIN MAX
5
-
HM-
65642C/883
MIN MAX UNITS
5
-
ns
9, 10, 11 -55oC TA +125oC 10
-
10
-
10
-
ns
9, 10, 11 -55oC TA +125oC 10
-
10
-
10
-
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume transition time 5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equivalent
load and CL 50pF, for CL > 50pF, access times are derated 0.15ns/pF.
TABLE 3. HM-65642/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Output High Voltage
VOH2 VCC = 4.5V, IO = -100µA
Input Capacitance
CIN
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
I/O Capacitance
CI/O
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
VCC = 4.5V, VI/O = GND
or VCC, All Measurements
Referenced to Device
Ground
Write Enable to Output in High Z TWLQZ VCC = 4.5V and 5.5V
Write Enable High to Output ON TWHQX VCC = 4.5V and 5.5V
Chip Enable to Output ON
TE1LQX VCC = 4.5V and 5.5V
TE2HQX
Output Enable to Output ON
TGLQX VCC = 4.5V and 5.5V
Chip Enable to Output in High Z TE1HQZ VCC = 4.5V and 5.5V
TE2LQZ
Output Disable to Output in High Z TGHQZ VCC = 4.5V and 5.5V
Output Hold from Address
Change
TAXQX VCC = 4.5V and 5.5V
NOTES
1
1, 2
1, 3
1, 2
1, 3
1
1
1
1
1
1
1
1
TEMPERATURE
MIN
-55oC TA +125oC VCC -0.4
TA = +25oC
-
TA = +25oC
-
TA = +25oC
-
TA = +25oC
-
-55oC TA +125oC
-
-55oC TA +125oC
5
-55oC TA +125oC
10
-55oC TA +125oC
5
-55oC TA +125oC
-
-55oC TA +125oC
-
-55oC TA +125oC
-
-55oC TA +125oC
10
MAX
-
12
10
14
12
50
-
-
-
50
60
50
-
UNITS
V
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are char-
acterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only. For design purposes CIN = 6pF typical and CI/O = 7pF typical.
3. Applies to LCC device types only. For design purposes CIN = 4pF typical and CI/O = 5pF typical.
223

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