RN2307 データシートの表示（PDF） - Toshiba
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RN2307 Datasheet PDF : 6 Pages
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RN2307~RN2309
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2307,RN2308,RN2309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1307~RN1309
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ)
RN2307
10
RN2308
22
RN2309
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2307
RN2308
RN2309
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Rating
Unit
−50
V
−50
V
−6
−7
V
−15
−100
mA
100
mW
150
°C
−55~150
°C
1
2001-06-07
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