RJU60C1SDPD データシートの表示（PDF） - Renesas Electronics

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RJU60C1SDPD

Single Diode Fast Recovery Diode

Renesas Electronics 

RJU60C1SDPD

Single Diode

Fast Recovery Diode

Features

• Fast reverse recovery time: trr = 60 ns typ. (at IF = 3 A, di/dt = 100 A/μs)

• Low forward voltage: VF = 1.4 V typ. (at IF = 5 A)

• Low reverse current: IR = 1 μA max. (at VR = 600 V)

Outline

Preliminary Datasheet

R07DS0372EJ0100

Rev.1.00

Apr 26, 2011

RENESAS Package code: PRSS0004ZJ-A

(Package name : TO-252)

4

2, 4

12 3

1

3

1. Anode

2. Cathode

3. Anode

4. Cathode

Absolute Maximum Ratings

Item

Maximum reverse voltage

Average rectified forward current

Continuous forward current Tc = 25°C

Tc = 100°C

Peak surge forward current

Junction to case thermal resistance

Junction temperature

Storage temperature

Electrical Characteristics

Symbol

VRM

Io

IF

IF

IFSM

θj-cd

Tj

Tstg

Item

Forward Voltage

Reverse current

Reverse Recovery Time

Symbol Min

Typ

VF

⎯

1.4

IR

⎯

⎯

trr

⎯

60

Ratings

600

3

5

3

36

6.6

150

–55 to +150

(Ta = 25°C)

Unit

V

A

A

A

A

°C/W

°C

°C

(Ta = 25°C)

Max

Unit

Test conditions

2.0

V IF = 5 A

1

μA VR = 600 V

⎯

ns IF = 3 A, di/dt = 100 A/μs

R07DS0372EJ0100 Rev.1.00

Apr 26, 2011

Page 1 of 3

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