RJP60V0DPM データシートの表示（PDF） - Renesas Electronics

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RJP60V0DPM

600V - 22A - IGBT Application: Inverter

Renesas Electronics 

RJP60V0DPM

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

5.5

Collector to emitter saturation voltage VCE(sat)

—

VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Short circuit withstand time

tsc

—

Notes: 3. Pulse test.

Preliminary

Typ

—

—

—

1.5

1.9

1080

58

42

75

10

45

45

40

100

70

6

Max

1

±1

7.5

2.1

—

—

—

—

—

—

—

—

—

—

—

—

Unit

A

A

V

V

V

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

s

(Ta = 25°C)

Test Conditions

VCE = 600 V, VGE = 0

VGE = ±30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 22 A, VGE = 15 V Note3

IC = 45 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 300 V

IC = 22 A

VCE = 300 V , VGE = 15 V

IC = 22 A

Rg = 5 

Inductive load

VCC  360 V , VGE = 15 V

Tc = 100 C

R07DS0669EJ0100 Rev.1.00

Feb 07, 2012

Page 2 of 7

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