RJH60D0DPQ-A0-T0 データシートの表示（PDF） - Renesas Electronics

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RJH60D0DPQ-A0-T0

600 V - 22 A - IGBT Application: Inverter

Renesas Electronics 

RJH60D0DPQ-A0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

/ Diode reverse current

ICES / IR

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

4.0

Collector to emitter saturation voltage VCE(sat)

—

VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Short circuit withstand time

tsc

3.0

FRD Forward voltage

FRD reverse recovery time

VF

—

trr

—

Notes: 3. Pulse test

Preliminary

Typ

—

—

—

1.6

2.0

1050

70

32

45

6

20

35

20

90

70

5.0

1.4

100

Max

5

±1

6.0

2.2

—

—

—

—

—

—

—

—

—

—

—

—

1.9

—

(Ta = 25°C)

Unit

Test Conditions

A VCE = 600 V, VGE = 0

A VGE = ±30 V, VCE = 0

V

VCE = 10 V, IC = 1 mA

V

IC = 22 A, VGE = 15 V Note3

V

IC = 45 A, VGE = 15 V Note3

pF VCE = 25 V

pF

VGE = 0

pF f = 1 MHz

nC VGE = 15 V

nC VCE = 300 V

nC IC = 22 A

ns VCC = 300 V , VGE = 15 V

ns IC = 22 A

ns Rg = 5 

ns Inductive load

s VCC  360 V , VGE = 15 V

V

IF = 22 A Note3

ns IF = 22 A

diF/dt = 100 A/s

R07DS0526EJ0100 Rev.1.00

Aug 26, 2011

Page 2 of 7

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