RJH60D0DPM-00-T1(2010) データシートの表示（PDF） - Renesas Electronics
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RJH60D0DPM-00-T1 Datasheet PDF : 8 Pages
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RJH60D0DPM
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
80
Ta = 25°C
60
150°C
40
20
VCE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage VGE (V)
10000
Typical Capacitance vs.
Colloctor to Emitter Voltage
1000
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Diode Forward Characteristics (Typical)
80
Ta = 25°C
60
150°C
40
20
VCE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltege VF (V)
R07DS0156EJ0200 Rev.2.00
Nov 16, 2010
Page 4 of 7
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