RJH60D3DPE データシートの表示（PDF） - Renesas Electronics
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RJH60D3DPE Datasheet PDF : 10 Pages
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RJH60D3DPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
IC = 17 A
35 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
70
60
Tc = 25°C
50
150°C
40
30
20
10
VCE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
Tc = 150°C
Pulse Test
5
IC = 17 A
4
35 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.8
VGE = 15 V
Pulse Test
2.4
IC = 35 A
2.0
17 A
1.6
8.5 A
1.2
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
20
16
0
Collector current wave
(Square wave)
12
8
4 Tj = 125°C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0161EJ0500 Rev.5.00
Apr 19, 2012
Page 4 of 9
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