RF04UA2D データシートの表示（PDF） - ROHM Semiconductor

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RF04UA2D

Super Fast Recovery Diode

ROHM Semiconductor 

RF04UA2D

　

Electrical characteristics curves

Data Sheet

10

10000

Tj=150C

1

Tj=125C

1000

100

0.1

Tj=25C

10

Tj=75C

1

0.01

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

FORWARD VOLTAGE : VF(V)

VF-IF CHARACTERISTICS

0

0

880

1000

Tj=25C

IF=0.2A

870

n=30pcs

100

860

10

850

1

840

AVE : 851.3mV

830

0.1

VF DISPERSION MAP

100

Tj=125C

Tj=150C

Tj=75C

10

Tj=25C

f=1MHz

50

100

150

200

REVERSE VOLTAGE : VR(V)

VR-IR CHARACTERISTICS

Tj=25C

VR=200V

n=30pcs

AVE:1.3nA

1

0

5

10

15

20

25

30

REVERSE VOLTAGE : VR(V)

VR-Ct CHARACTERISTICS

30

Tj=25°C

f=1MHz

VR=0V

20

AVE:10.9pF

n=10pcs

10

IR DISPERSION MAP

0

Ct DISPERSION MAP

30

20

10

0

1000

100

10

1

1

30

Ifsm

1cyc

25

8.3ms

20

AVE:10.2A

15

10

5

0

IFSM DISRESION MAP

30

Ifsm

25

t

20

15

10

5

0

10

100

TIME : t(ms)

IFSM-t CHARACTERISTICS

AVE:10.2ns

Tj=25°C

IF=0.5A

IR=1A

Irr=0.25×IR

n=10pcs

trr DISPERSION MAP

AVE : 21.9kV

AVE : 3.9kV

C=200pF

R=0

C=100pF

R=1.5k

ESD DISPERSION MAP

1000

100

10

Ifsm

8.3ms 8.3ms

1cyc

1

1

10000

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

IM=10mA

IF=1A

1000

100

1ms time

300s

Rth(j-a)

Rth(j-c)

10

On glass-epoxy board

1

0.001

0.01 0.1

1

10 100

TIME : t(s)

Rth-t CHARACTERISTICS

1000

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2/3

2011.05 - Rev.A

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